Emerging Technologies (cs.ET)

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    The progress of the Internet of Things(IoT) technologies and applications requires the efficient low power circuits and architectures to maintain and improve the performance of the increasingly growing data processing systems. Memristive circuits and substitution of energy-consuming devices with memristors is a promising solution to reduce on-chip area and power dissipation of the architectures. In this paper, we proposed a CMOS-memristive fully differential transimpedance amplifier and assess the impact of memristors on the amplifier performance. The fully differential amplifiers were simulated using 180nm CMOS technology and have 5.3-23MHz bandwidths and 2.3-5.7k$\Omega$ transimpedance gains with a 1pF load. We compare the memristor based amplifier with conventional architecture. The gain, frequency response, linear range, power consumption, area, total harmonic distortion and performance variations with temperature are reported.
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    This paper proposes four quadrant analog multiplier using CMOS-memristor circuit. Currently, there are plenty of analog multipliers using resistors and CMOS transistors. They can attain perfect multiplication but have several disadvantages such as lower processing speed, higher power consumption and larger chip areas. Memristor based circuits are introduced to resolve the mentioned drawbacks. In this paper current mode four quadrant multiplier based on squaring circuits is taken as a framework, and CMOS transistors are replaced with memristors. The circuit design is simulated with SPICE, and variability analysis and performance variation with temperature is performed. The proposed circuit allows faster processing with retained data while dissipating less power retaining the multiplication characteristics.
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    The implementation of analog neural network and online analog learning circuits based on memristive crossbar has been intensively explored in recent years. The implementation of various activation functions is important, especially for deep leaning neural networks. There are several implementations of sigmoid and tangent activation function, while the implementation of the neural networks with linear activation functions is an open problem. Therefore, this paper introduces a multilayer perceptron design with linear activation function. The temperature and noise analysis was performed. The perceptron showed a good performance and strong durability to temperature changes.
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    CMOS-transistors circuits have been used as a conventional approach for designing an analog multiplier in modern era of industrial electronics. However, previous studies have shown, that based on the working region of transistors, such as saturation or weak inversion regions, the circuit may face issues with output ranges and accuracy. One possible solution to that problem could be choosing CMOS-memristors as a basis for the circuit. Although memristor research is still a growing and promising field, one could argue that its implementation could bring many benefits such as increased circuit density and superior computation speeds, etc. Additionally, the era of Moore's Law of downscaling the size of transistors is to eventually come to an end. No one knows whether the end of a scaling paradigm is to happen within the next five or twenty years. Hence, the research on this particular subject is quite important. This paper proposes an analog multiplier design with CMOS and memristive components. Mainly, the aim of the paper is to compare the power consumption and overall characteristic of the multiplier such as the accuracy and the output range to that of the conventional multiplier. The designed circuit is expected to be suitable for low power applications, and it is built using 18um CMOS technology. The circuit simulations will be conducted using SPICE software. Finally, the effects of channel modulation and temperature on the multiplier performance will be discussed.
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    Activation functions are widely used in neural networks to decide the activation value of the neural unit based upon linear combinations of the weighted inputs. The effective implementation of activation function is highly important, as they help to represent non-linear complex functional mappings between inputs and outputs of the neural network. One of the non-linear approaches is to use a sigmoid function. Therefore, there is a growing need in enhancing the performance of sigmoid circuits. In this paper, the main objective is to modify existing current mirror based sigmoid model by replacing CMOS transistors with memristor devices. This model was tested varying different circuit parameters, transistor size and temperature. The the area, power and noise in the modified CMOS-memristive sigmoid circuit are shown. The application of memristors in the sigmoid circuit results in higher component density in an on-chip area, allowing a reduction of power and area by 7$\%$. The proposed sigmoid circuit was simulated in SPICE using 180nm TSMC CMOS technology.
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    In the last decade, the interest to emulation of the functionality and structure of the human brain to solve the problems related to image processing and pattern recognition, especially using to Artificial Neural Network (ANN), has increased. Since the capability of ANN to compute at high-speed has been proven to be very useful for various computational problems. One of the simple ANN models is perceptron. Since the perceptron is the basic form of a neural network, the efficient implementation of analog activation functions is required. As various works introduce the design of sigmoid and tangent activation functions, the other activation functions remain an open research problem. This paper describes the design of the perception circuit with the linear activation function using operational amplifier and memristive crossbar. Additionally, the variation of performance with temperature, noise of the circuit is presented.
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    With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the design in terms of on-chip area, power efficiency, resistance to temperatures and speed. To achieve this, NOT gates in the circuit were constructed using memristor and CMOS. The main aim of the paper is to check the effect of memristors on characteristics of sense amplifier. The design was tested on Conventional Current Sense Amplifier (CSA) circuit. Changes in power, area, sensing delay and offset are reported in the paper.
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    An instrumentation amplifier (InAmp) is an electronic device used in many applications, where test and measuring accuracy is required. However, one of the drawbacks of an InAmp is limited operation gain range. In this paper, we investigate the possibility of replacing CMOS transistors in InAmp with memristive devices. The application of memristors in CMOS instrumentation amplifier design has lead to reduction of on-chip area and power consumption, comparing to the original design. The memristor based implementation of InAmp design has an improved gain. The advantages of memristor application are shown, and DC and operation gain range are discussed in this paper. Furthermore, variability analysis and performance variation with respect to the temperature variation is provided. In addition, the noise sensitivity analysis is performed. Moreover, varying values of resistance levels of memristors, the operation gain range, gain accuracy as well as a the noise reduction can be improved.
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    This paper proposes an innovative chaotic circuit based on Chua's oscillator. It combines traditional realization of a non-linear resistor in Chua's chaotic oscillator with a promising memristive circuitry. This mixed implementation connects old research works that were focused on diodes with relatively new research papers that are, now, concentrated on memristors. As a result, more reliable chaotic circuit with an HP memristor is obtained that could be used as a source of randomness. Dynamic behavior of the circuit is studied by obtaining fft analysis, different chaotic attractors and Lyapunov exponent spectrum. The results show that the addition of a memristor enhances chaotic behavior of the circuit while maintaining the same power dissipation.