We present an alternative one-electron equation for resolving many-electron problem to one-electron approximation and including the exchange and correlation effects in an analytical way, thereby fulfilling the requirements for ab initio calculation. To derive one-electron equation, we accept a new notion of equivalent function suggestive of the pseudo wavefunction. As a result, we reduce many-electron equation to one-electron including the exchange effect in an analytical method. Moreover we accept the notion of phase norm for two electrons to resolve the electronic correlation problem. The phase norm is used to specify the electron-approachable limit between particles. We take into consideration the electronic correlation with the help of a correlation-hole function in terms of the phase norm, by which multiplying the integrand of the operator term representing the interaction between electrons. Using the phase norm leads to analytical consideration of the electronic correlation without employing in a factitious way the additional term pertaining to correlation, so it embodies the physical essence of electronic correlation. The derived equation becomes an one-electron equation which does not include an additional term pertaining to the exchange and correlation, but takes into consideration the exchange and correlation effects in a rigorous ab initio way.
We theoretically investigate an exciton-coupled electron transfer (XCET) process that is conversion of an exciton into a charge transfer state. This conversion happens in an exciton transfer (XT) process, and the electron moves away in an electron transfer(ET) process in multiple environments (baths). This XCET process plays an essential role in the harvesting of solar energy in biological and photovoltaic materials. We develop a practical theoretical model to study the efficiency of XCET process that occurs either in consecutive or concerted processes under the influence of non-Markovian baths. The role of quantum coherence in the XT-ET system and the baths is investigated using reduced hierarchal equations of motion (HEOM). This model includes independent baths for each XT and ET state, in addition to a XCET bath for the conversion process. We found that, while quantum system-bath coherence is important in the XT and ET processes, coherence between the XT and ET processes must be suppressed in order to realize efficient irreversible XCET process through the weak off-diagonal interaction between the XT and ET bridge sites arises from a XCET bath.
Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanoscale magnetic islands is observed both in the plateau transition regions as well as within the fully quantized C=$\pm$1 Chern plateaus. Modulation doping of the topological insulator films is found to give rise to significantly larger superparamagnetic islands as compared to uniform magnetic doping, evidently leading to enhanced robustness of the quantum anomalous Hall effect. Nonetheless, even in this more robust quantum state, attaining full quantization of transport coefficients requires magnetic alignment of at least 95% of the superparamagnetic islands. The superparamagnetic order is also found within the incipient C=0 zero Hall plateau, which may host an axion state if the top and bottom magnetic layers are magnetized in opposite directions. In this regime, however, a significantly lower level of island alignment is found in our samples, hindering the formation of the axion state. Comprehension and control of superparamagnetic dynamics is thus a key factor in apprehending the fragility of the quantum anomalous Hall state and in enhancing the endurance of the different quantized states to higher temperatures for utilization of robust topological protection in novel devices.