Materials Science (cond-mat.mtrl-sci)

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    We theoretically study artificial light harvesting by a dimerized Mobius ring. When the donors in the ring are dimerized, the energies of the donor ring are splitted into two sub-bands. Because of the nontrivial Mobius boundary condition, both the photon and acceptor are coupled to all collectiveexcitation modes in the donor ring. Therefore, the quantum dynamics in the light harvesting are subtly influenced by the dimerization in the Mobius ring. It is discovered that energy transfer is more efficient in a dimerized ring than that in an equally-spaced ring. This discovery is also confirmed by the calculation with the perturbation theory, which is equivalent to the Wigner-Weisskopf approximation. Our findings may be benificial to the optimal design of artificial light harvesting.
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    We present experimental control of the magnetic anisotropy in a gadolinium iron garnet (GdIG) thin film from in-plane to perpendicular anisotropy by simply changing the sample temperature. The magnetic hysteresis loops obtained by SQUID magnetometry measurements unambiguously reveal a change of the magnetically easy axis from out-of-plane to in-plane depending on the sample temperature. Additionally, we confirm these findings by the use of temperature dependent broadband ferromagnetic resonance spectroscopy (FMR). In order to determine the effective magnetization, we utilize the intrinsic advantage of FMR spectroscopy which allows to determine the magnetic anisotropy independent of the paramagnetic substrate, while magnetometry determines the combined magnetic moment from film and substrate. This enables us to quantitatively evaluate the anisotropy and the smooth transition from in-plane to perpendicular magnetic anisotropy. Furthermore, we derive the temperature dependent $g$-factor and the Gilbert damping of the GdIG thin film.
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    We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
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    The effectiveness of molecular-based light harvesting relies on transport of optical excitations, excitons, to charg-transfer sites. Measuring exciton migration has, however, been challenging because of the mismatch between nanoscale migration lengths and the diffraction limit. In organic semiconductors, common bulk methods employ a series of films terminated at quenching substrates, altering the spatioenergetic landscape for migration. Here we instead define quenching boundaries all-optically with sub-diffraction resolution, thus characterizing spatiotemporal exciton migration on its native nanometer and picosecond scales without disturbing morphology. By transforming stimulated emission depletion microscopy into a time-resolved ultrafast approach, we measure a 16-nm migration length in CN-PPV conjugated polymer films. Combining these experiments with Monte Carlo exciton hopping simulations shows that migration in CN-PPV films is essentially diffusive because intrinsic chromophore energetic disorder is comparable to inhomogeneous broadening among chromophores. This framework also illustrates general trends across materials. Our new approach's sub-diffraction resolution will enable previously unattainable correlations of local material structure to the nature of exciton migration, applicable not only to photovoltaic or display-destined organic semiconductors but also to explaining the quintessential exciton migration exhibited in photosynthesis.
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    The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately affected by Berry phases. Electron-hole recollisions and HSG occur when a near-band gap laser beam excites a semiconductor that is driven by sufficiently strong terahertz (THz)-frequency electric fields. We carried out experimental and theoretical studies of HSG from three GaAs/AlGaAs quantum wells. The observed HSG spectra contain sidebands up to the 90th order, to our knowledge the highest-order optical nonlinearity observed in solids. The highest-order sidebands are associated with electron-hole pairs driven coherently across roughly 10% of the Brillouin zone around the \Gamma point. The principal experimental claim is a dynamical birefringence: the sidebands, when the order is high enough (> 20), are usually stronger when the exciting near-infrared (NIR) and the THz electric fields are polarized perpendicular than parallel; the sideband intensities depend on the angles between the THz field and the crystal axes in samples with sufficiently weak quenched disorder; and the sidebands exhibit significant ellipticity that increases with increasing sideband order, despite nearly linear excitation and driving fields. We explain dynamical birefringence by generalizing the three-step model for high order harmonic generation. The hole accumulates Berry phases due to variation of its internal state as the quasi-momentum changes under the THz field. Dynamical birefringence arises from quantum interference between time-reversed pairs of electron-hole recollision pathways.
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    Uranium beryllium 13 is a heavy fermion system whose properties depend strongly on its internal magnetic structure. Different models have been proposed to explain its magnetic distribution , but additional experimental data is required. An experimental method that is particularly useful is muon spin spectroscopy ($\mu$SR). In this process, positive muons are embedded into a sample where they localize at magnetically unique sites. The net magnetic field causes precession of the muon spin at the Larmor frequency, generating signals that can provide measurements of the internal field. This experiment specifically determines the muon localization sites of uranium beryllium 13. To do so, results from muon spin experiments at various temperatures and external magnetic field strengths are analyzed. The experiments took place at TRIUMF in the University of British Columbia. Data from the temperature and magnetic field ramps are analyzed through ROOT. The Fourier transforms of experimental data showed peaks of muon localization at the geometric centers of the edges of the crystal lattice. These results can be used to build a rigorous model of uranium beryllium 13's internal magnetic structure and resulting magnetic field distribution.
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    The 11-22 and 11-26 twinning modes were recently put in evidence by Ostapovets et al. (Phil. Mag, 2017)and interpreted as 101-2-101-2 double-twins formed by a simultaneous action of two twinning shears. We propose another interpretation in which the twinning modes result from a one-step mechanism based on the same (58deg, a+2b) prototype stretch twin. . The two twins differ from the prototype twin by their obliquity correction. The results are compared with the classical theory of twinning and with Westlake-Rosenbaum model of 11-22 twinning. An unconventional twinning mode recently discovered in a magnesium single crystal based on the same prototype twin will be the subject of a separate publication.
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    We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and MgO. Additionally, samples with an MgAl$_2$O$_4$ barrier exhibit a high thermovoltage of more than 350$\mu$V in comparison to 90$\mu$V for the MTJs with MgO barrier when heated with the maximum laser power of 150mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across magnetic tunnel junctions for future applications in spin caloritronics, the emerging research field that combines spintronics and themoelectrics.
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    GeTe wins the renewed research interest due to its giant bulk Rashba spin orbit coupling (SOC), and becomes the father of a new multifunctional material, i.e., ferroelectric Rashba semiconductor. In the present work, we investigate Rashba SOC at the interface of the ferroelectric semiconductor superlattice GeTe(111)/InP(111) by using the first principles calculation. Contribution of the interface electric field and the ferroelectric field to Rashba SOC is revealed. A large modulation to Rashba SOC and a reversal of the spin polarization is obtained by switching the ferroelectric polarization. Our investigation about GeTe(111)/InP(111) superlattice is of great importance in the application of ferroelectric Rashba semiconductor in the spin field effect transistor.
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    We report experimental evidence for the formation of chiral bobbers -- a surface topological spin texture -- at the surface/interface of FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between film thickness and the slope of the susceptibility (dX/dH). We present evidence for the evolution as a function of film thickness, L, from a skyrmion phase for L < L_D/2 to a cone phase with chiral bobbers at the interface for L > L_D/2, where L_D ~ 70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction (DMI).
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    We simulate the contact between aluminum nanowires using molecular dynamics. Our simulation results show that the contribution to the adhesion area from surface atom diffusion increases significantly with decreasing wire radius. We derive a two-dimensional phenomenological kinetic model to describe this strong nanometer-size effect based on a melting-point reduction approach. This model should be helpful for understanding various phenomena related to nanoscale contacts such as nanowire cold welding, self-assembly of nanoparticles and adhesive nanopillar arrays, as well as the electrical, thermal, and mechanical properties of microscopic interfaces.
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    Solving Peierls-Boltzmann transport equation with interatomic force constants (IFCs) from first-principles calculations has been a widely used method for predicting lattice thermal conductivity of three-dimensional materials. With the increasing research interests in two-dimensional materials, this method is directly applied to them but different works show quite different results. In this work, classical potential was used to investigate the effect of the accuracy of IFCs on the predicted thermal conductivity. Inaccuracies were introduced to the third-order IFCs by generating errors in the input forces. When the force error lies in the typical value from first-principles calculations, the calculated thermal conductivity would be quite different from the benchmark value. It is found that imposing translational invariance conditions cannot always guarantee a better thermal conductivity result. It is also shown that Grüneisen parameters cannot be used as a necessary and sufficient criterion for the accuracy of third-order IFCs in the aspect of predicting thermal conductivity.
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    The majority of these machines fabricate from raw material in powder form using a directed energy beam to create a local melt zone. Total hip replacement is recommended for people who have medical issues related to excessive wear of the acetabular, osteoarthritis, accident or age. Researches have shown that large numbers of hip arthroplasties (where the articular surface of a musculoskeletal joint is replaced), hip remodelling, or realignment are carried out annually and will increase in the next few decades. Manufacturing of acetabular shells by using AM is a promising and emerging method that has a great potential to improve public health. Lost wax casting or investment casting is currently used to produce acetabular shells followed by lengthy and complex secondary processes such as machining and polishing. Living organs and medical models have intricate 3D shapes that are challenging to identity in X-ray CT images. These images are used for preparing treatment plans to improve the quality of the surgeries regarding waiting and surgery time per procedure and care regime. For instance, a limited number of hip replacement procedures can be carried out on each acetabulum due to a decrease of bone thickness. Rapid prototyping is a suitable treatment planning tool in complex cases to enhance the quality of surgical procedure and provide long-term stability that can be used to customize the shape and size of the acetabular shell. In this paper, to analyse the manufacturing of a prosthetic acetabular shell, built-up lines resulting from a thermal stress flow and process stopping during the selective laser melting (SLM) AM process, with regarding Gibbs free energy, interfacial energy, and equilibrium temperature will be discussed. Geometrical measurements showed 1.59% and 0.27% differences between the designed and manufactured prototype for inside and outside diameter respectively.
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    Topologically protected one-way transportation of sound, mimicking the topological properties of the condensed matter, has received greatly attentions. Thus far, the topological phases and the topological edge states of sound are yielded in the vicinity of the Dirac cones fixed at the high symmetric points of the Brillouin zone. Here, we present a new type of the phononic topological insulator in the square lattice with position-variational Dirac cones along the high symmetric lines. The emergence of such Dirac cones, characterized by the vortex structure in a momentum space, is attributed to the unavoidable band crossing protected by the mirror symmetry. By rotating the square columns, these Dirac points are lifted and a complete band gap is induced because of the mirror-symmetry-breaking. Along the topological domain wall between the phononic crystals (PhCs) with the distinct topological phases stemming from the mirror symmetry inversion, we obtain a topological edge state for the neutral scalar sound which is absence of the intrinsic polarization and is uncoupled from an external field. Within a wide rotational range of the square column, the topological edge state in our PhCs evolves from a gapless one into a gapped one with a robust edge transport against cavities and disorders. Our excellent results are promising for the exploration of the new topological phenomena in the PhCs beyond the hexagonal lattices. Furthermore, the flexibility of the rotational square columns provides an interesting platform for the design of tunable topological acoustic devices.
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    The strong perpendicular magnetic anisotropy of $L{\rm1_0}$-ordered FePt has been the subject of extensive studies for a long time. However, it is not known which element, Fe or Pt, mainly contributes to the magnetic anisotropy energy (MAE). We have investigated the anisotropy of the orbital magnetic moments of Fe 3$d$ and Pt 5$d$ electrons in $L{\rm1_0}$-ordered FePt thin films by Fe and Pt $L_{2,3}$-edge x-ray magnetic circular dichroism (XMCD) measurements for samples with various degrees of long-range chemical order $S$. Fe $L_{2,3}$-edge XMCD showed that the orbital magnetic moment was larger when the magnetic field was applied perpendicular to the film than parallel to it, and that the anisotropy of the orbital magnetic moment increased with $S$. Pt $L_{2,3}$-edge XMCD also showed that the orbital magnetic moment was smaller when the magnetic field was applied perpendicular to the film than parallel to it, opposite to the Fe $L_{2,3}$-edge XMCD results although the anisotropy of the orbital magnetic moment increases with $S$ like the Fe edge. These results are qualitatively consistent with the first-principles calculation by Solovyev ${\it et\ al.}$ [Phys. Rev. B $\bf{52}$, 13419 (1995).], which also predicts the dominant contributions of Pt 5$d$ to the magnetic anisotropy energy rather than Fe 3$d$ due to the strong spin-orbit coupling and the small spin splitting of the Pt 5$d$ bands in $L{\rm1_0}$-ordered FePt.
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    In this paper we assess the predictive power of the self-consistent hybrid functional scPBE0 in calculating the band gap of oxide semiconductors. The computational procedure is based on the self-consistent evaluation of the mixing parameter $\alpha$ by means of an iterative calculation of the static dielectric constant using the perturbation expansion after discretization (PEAD) method and making use of the relation $\alpha = 1/\epsilon_{\infty}$. Our materials dataset is formed by 30 compounds covering a wide range of band gaps and dielectric properties, and includes materials with a wide spectrum of application as thermoelectrics, photocatalysis, photovoltaics, transparent conducting oxides, and refractory materials. Our results show that the scPBE0 functional provides better band gaps than the non self-consistent hybrids PBE0 and HSE06, but scPBE0 does not show significant improvement on the description of the static dielectric constants. Overall, the scPBE0 data exhibit a mean absolute percentage error of 14 \% (band gaps) and 10 \% ($\epsilon_\infty$). For materials with weak dielectric screening and large excitonic biding energies scPBE0, unlike PBE0 and HSE06, overestimates the band gaps, but the value of the gap become very close to the experimental value when excitonic effects are included (e.g. for SiO$_2$). However, special caution must be given to the compounds with small band gaps due to the tendency of scPBE0 to overestimate the dielectric constant in proximity of the metallic limit.
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    A subtle balance between competing interactions in strongly correlated systems can be easily tipped by additional interfacial interactions in a heterostructure. This often induces exotic phases with unprecedented properties, as recently exemplified by high-Tc superconductivity in FeSe monolayer on the nonmagnetic SrTiO3. When the proximity-coupled layer is magnetically active, even richer phase diagrams are expected in iron-based superconductors (FeSCs), which however has not been explored due to the lack of a proper material system. One promising candidate is Sr2VO3FeAs, a naturally-assembled heterostructure of a FeSC and a Mott-insulating vanadium oxide. Here, using high-quality single crystals and high-accuracy 75As and 51V nuclear magnetic resonance (NMR) measurements, we show that a novel electronic phase is emerging in the FeAs layer below T0 ~ 155 K without either static magnetism or a crystal symmetry change, which has never been observed in other FeSCs. We find that frustration of the otherwise dominant Fe stripe and V Neel fluctuations via interfacial coupling induces a charge/orbital order with C4-symmetry in the FeAs layers, while suppressing the Neel antiferromagnetism in the SrVO3 layers. These findings demonstrate that the magnetic proximity coupling is effective to stabilize a hidden order in FeSCs and, more generally, in strongly correlated heterostructures.
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    Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on the natural BiTeI substrate. We show that the topological properties of the Bi$_2$Te$_2$I$_2$ SL on this substrate keep $\mathbb Z_2$ invariant. We also demonstrate that ultra thin centrosymmetric films constructed in the similar manner but from related material BiTeBr are trivial band insulators up to five-SL film thickness. In contrast to Bi$_2$Te$_2$I$_2$ for which the stacking of nontrivial SLs in 3D limit gives a strong topological insulator (TI) phase, strong TI is realized in 3D Bi$_2$Te$_2$Br$_2$ in spite of the SL is trivial. For the last material of the BiTe$X$ ($X$=I,Br,Cl) series, BiTeCl, both 2D and 3D centrosymmetric phases are characterized by topologically trivial band structure.
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    Typical device architectures in polymer-based optoelectronic devices, such as field effect transistors organic light emitting diodes and photovoltaic cells include sub-100 nm semiconducting polymer thin-film active layers, whose microstructure is likely to be subject to finite-size effects. The aim of this study was to investigate effect of the two-dimensional spatial confinement on the internal structure of the semiconducting polymer poly(9,9-dioctylfluorene) (PFO). PFO melts were confined inside the cylindrical nanopores of anodic aluminium oxide (AAO) templates and crystallized via two crystallization strategies, namely, in the presence or in the absence of a surface bulk reservoir located at the template surface. We show that highly textured semiconducting nanowires with tuneable crystal orientation can be thus produced. Moreover, our results indicate that employing the appropriate crystallization conditions extended-chain crystals can be formed in confinement. The results presented here demonstrate the simple fabrication and crystal engineering of ordered arrays of PFO nanowires; a system with potential applications in devices where anisotropic optical properties are required, such as polarized electroluminescence, waveguiding, optical switching, lasing, etc.
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    A series of donor-acceptor-donor (D-A-D) structured small-molecule compounds, with 3,3'-(ethane-1,2-diylidene)bis(indolin-2-one) (EBI) as a novel electron acceptor building block coupled with various electron donor end-capping moieties (thiophene, bithiophene and benzofuran), were synthesized and characterized. When the fused-ring benzofuran is combined to EBI (EBI-BF), the molecules displayed a perfectly planar conformation and afforded the best charge tranport properties among these EBI compounds with a hole mobility of up to 0.021 cm2 V-1 s-1. All EBI-based small molecules were used as donor material along with a PC61BM acceptor for the fabrication of solution-processed bulk-heterojunction (BHJ) solar cells. The best performing photovoltaic devices are based on the EBI derivative using the bithiophene end-capping moiety (EBI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing to the broad absorption spectra of EBI-2T and the appropriate morphology of the BHJ. With the aim of establishing a correlation between the molecular structure and the thin film morphology, differential scanning calorimetry, atomic force microscopy and X-ray diffraction analysis were performed on neat and blend films of each material.
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    An oligomeric semiconductor containing three bisthiophenediketopyrrolopyrole units (Tri-BTDPP) was synthesized and characterized. Tri-BTDPP has a HOMO level of -5.34 eV, a broad absorption close to the near infrared region and a low band gap of 1.33 eV. Additionally, a promising hole mobility of 1 x 10-3 cm V-1 s-1 was achieved after thermal annealing at 150 C in organic field effect transistors (OFET). Organic photovoltaic (OPV) cells containing Tri-BTDPP and PC71BM as the donor/acceptor couple exhibited a power conversion efficiency (PCE) of 0.72%. Through an intensive study of the active layer using AFM, XRD, and DSC, it was found that Tri-BTDPP and PC71BM were unable to intermix effectively, resulting in oversized Tri-BTDPP crystalline phases and thus poor charge separation. Strategies to improve the OPV performance were thus proposed.
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    The effect of interfaces and confinement in polymer ferroelectric structured is discussed. Results on confinement under different geometries are presented and the comparison of all of them allows to evidence that the presence of an interface in particular cases stabilizes a ferroelectric phase that is not spontaneously formed under normal bulk processing conditions
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    Polymers with the same chemical composition can provide different properties by reducing the dimension or simply by altering their nanostructure. Recent literature works report hundreds of examples of advances methods in the fabrication of polymer nanostructures accomplished following different approaches, soft lithography, self-assembly routes, template assisted methods, etc. Polymer nanostructures with modulated morphologies and properties can be easily achieved from anodized aluminum oxide (AAO) templates assisted methods. In the last decade, fabrication of polymer nanostructures in the nanocavities of AAO has raised a great interest since allows the control and tailoring of dimension of a huge number of polymer and polymer-based composites materials. The fact that polymer dimension can be adjusted allow the study of size-dependency properties. Moreover, modulated polymer nanostructures can be designed for specific applications from AAO templates methods. Taking into account the last considerations, this review present an overview of recent and new insights in the fabrication methods of polymer nanostructures from hard porous Anodic Aluminum Oxide (AAO) templates with emphasis on the study of polymer structure/property relationship at nanometric scale and stressing the potential interest in particular applications.
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    Poly(vinylidene fluoride) (PVDF) has long been regarded as an ideal piezoelectric plastic because it exhibits a large piezoelectric response and a high thermal stability. However, the realization of piezoelectric PVDF elements has proven to be problematic, amongst others, due to the lack of industrially-scalable methods to process PVDF into the appropriate polar crystalline forms. Here, we show that fully piezoelectric PVDF films can be produced via a single-step process that exploits the fact that PVDF can be molded at temperatures below its melting temperature, i.e. via solid-state-processing. We demonstrate that we thereby produce d_PVDF, the piezoelectric charge coefficient of which is comparable to that of biaxially stretched d_PVDF. We expect that the simplicity and scalability of solid-state processing combined with the excellent piezoelectric properties of our PVDF structures will provide new opportunities for this commodity polymer and will open a range of possibilities for future, large-scale, industrial production of plastic piezoelectric films
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    Herein, we elucidate the impact of tubular confinement on the structure and relaxation behaviour of poly(vinylidene difluoride) (PVDF) and how these affect the para-/ferroelectric behavior of this polymer. We use PVDF nanotubes that were solidified in anodic aluminum oxide (AAO) templates. Dielectric spectroscopy measurements evidence a bimodal relaxation process for PVDF nanotubes: besides the bulk-like -relaxation, we detect a notably slower relaxation that is associated with the PVDF regions of restricted dynamics at the interface with the AAO pore. Strickingly, both the bulk-like and the interfacial relaxation tend to become temperature independent as the temperature increases - a behavior that has been observed before in inorganic relaxor ferroelectrics. In line with this, we observe that the real part of the dielectric permittivity of the PVDF nanotubes exhibits a broad maximum when plotted against the temperature, which is, again, a typical feature of relaxor ferroelectrics. As such, we propose that in nanotubular PVDF, ferroelectric-like nanodomains are formed in the amorphous phase regions adjacent to the AAO interface. These ferroelectric nanodomains may result from an anisotropic chain conformation and a preferred orientation of local dipoles due to selective H-bond formation between the PVDF macromolecues and the AAO walls. Such relaxor-ferroelectric-like behaviour has not been observed for non-irradiated PVDF homopolymer; our findings thus may enable in the future alternative applications for this bulk commodity plastic, e.g., for the production of electrocaloric devices for solid-state refrigeration which benefit from a relaxor-ferroelectric-like response.
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    The friction force observed at macroscale is the result of interactions at various lower length scales, which are difficult to model in a combined manner. For this reason, simplified approaches are required, depending on the specific aspect to be investigated. In particular, the dimensionality of the system is often reduced, especially in models designed to provide a qualitative description of friction properties of elastic materials, e.g. the spring-block model. In this paper, we implement a two dimensional extension of the spring-block model, aiming to investigate by means of numerical simulations the frictional behaviour of a surface in the presence of surface features like cavities, pillars or complex anisotropic structures. We show how friction can be effectively reduced or controlled by appropriate surface features design.
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    We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Under illumination of white light and weak 405-nm near-ultraviolet laser light (30 mW), an unexpectedly large (200-300%) change in polarization and displacement current was observed. Light also changes the dc conduction current density by one to two orders of magnitude with a large switchable open circuit voltage (Voc ~ 2 V) and short circuit current (Jsc ~ 5x10-8 A). The samples show a photo-current ON/OFF ratio of order 6:1 under illumination of weak light.
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    We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.
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    We study the effect of asperity size on the adhesion properties of metal contact using atomistic simulations. The simulated size effect of individual nanoscale asperityies is applied to macroscopic rough surfaces by introducing a curvature radius distribution to a continuum-mechanics-based contact model. Our results indicate that the contact adhesion can be optimized by changing the curvature radius distribution of the asperity summits.
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    We study exciton-plasmon coupling in two-dimensional semiconductors coupled with Ag plasmonic lattices via angle-resolved reflectance spectroscopy and by solving the equations of motion (EOMs) in a coupled oscillator model accounting for all the resonances of the system. Five resonances are considered in the EOM model: semiconductor A and B excitons, localized surface plasmon resonances (LSPRs) of plasmonic nanostructures and the lattice diffraction modes of the plasmonic array. We investigated the exciton-plasmon coupling in different 2D semiconductors and plasmonic lattice geometries, including monolayer MoS2 and WS2 coupled with Ag nanodisk and bowtie arrays, and examined the dispersion and lineshape evolution in the coupled systems via the EOM model with different exciton-plasmon coupling parameters. The EOM approach provides a unified description of the exciton-plasmon interaction in the weak, intermediate and strong coupling cases with correctly explaining the dispersion and lineshapes of the complex system. This study provides a much deeper understanding of light-matter interactions in multilevel systems in general and will be useful to instruct the design of novel two-dimensional exciton-plasmonic devices for a variety of optoelectronic applications with precisely tailored responses.
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    While producing comparable efficiencies and showing similar properties when probed by conventional techniques, such as Raman, photoluminescence and X-ray diffraction, two thin film solar cell materials with complex structures, such as quaternary compound CZTSe, may in fact differ significantly in their microscopic structures. In this work, laser induced modification Raman spectroscopy, coupled with high spatial resolution and high temperature capability, is demonstrated as an effective tool to obtain important structure information beyond that the conventional characterization techniques can offer, and thus to reveal the microscopic scale variations between nominally similar alloys. Specifically, CZTSe films prepared by sputtering and co-evaporation methods that exhibited similar Raman and XRD features were found to behave very differently under high laser power and high temperature Raman probe, because the differences in their microscopic structures lead to different structure modifications in response to the external stimuli, such as light illumination and temperature. They were also shown to undergo different degree of plastic changes and have different thermal conductivities as revealed by spatially-resolved Raman spectroscopy.
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    The magnetic properties and magnetic structure are presented for CoPS$_3$, a quasi-two-dimensional antiferromagnet on a honeycomb lattice with a Néel temperature of $T_N \sim 120$ K. The compound is shown to have XY-like anisotropy in its susceptibility, and the anisotropy is analysed to extract crystal field parameters. For temperatures between 2 K and 300 K, no phase transitions were observed in the field-dependent magnetization up to 10 Tesla. Single-crystal neutron diffraction shows that the magnetic propagation vector is \bfk= $\left[010\right]$ with the moments mostly along the $\mathbf{a}$ axis and with a small component along the $\mathbf{c}$ axis, which largely verifies the previously-published magnetic structure for this compound. The magnetic Bragg peak intensity decreases with increasing temperature as a power law with exponent $2\beta = 0.60 \pm 0.01$ for $T > 0.9~T_N$.
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    The Haldane spin-chain compound, Tb2BaNiO5, has been known to order antiferromagnetically below (T_N= ) 63 K. The present magnetic studies on the polycrystals bring out that there is another magnetic transition at a lower temperature (T_2= ) 25 K, with a pronounced magnetic-field induced metamagnetic and metaelectric behavior. Multiferroic features are found below T_2 only, and not at T_N. The most intriguing observation is that the observed change of dielectric constant is intrinsic and largest (e.g., about 18% at 15 K) within this Haldane spin-chain family, R2BaNiO5. Taking into account that this trend (the largest change for Tb case within this family) correlates with a similar trend in T_N (with the values of T_N being about 55, 58, 53 and 32 K for Gd, Dy, Ho and Er cases), we believe that an explanation usually offered for this T_N behavior in rare-earth systems is applicable for this behavior as well . That is, single-ion anisotropy following crystal-field splitting is responsible for this extraordinary magnetodielectric effect in this Tb case. To our knowledge, such an observation was not made in the past literature of multiferroics.
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    The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However, in transition-metal doped TI, the only experimentally demonstrated QAHE system to date, the effect is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (Tc) and inherent spin disorder associated with the random magnetic dopants. Here we demonstrate drastically enhanced Tc by exchange coupling TI to Tm3Fe5O12, a high-Tc magnetic insulator with perpendicular magnetic anisotropy. Signatures that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is indeed spin-polarized. The greatly enhanced Tc, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures.
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    To pursuit high electrochemical performance of supercapacitors based on Faradaic charge-transfer with redox reaction or absorption/desorption effect, the intercalation efficiency of electrolyte ions into electrode materials is a crucial prerequisite to surpass the pure surface capacity with extra bulk contribution. Here we report layered barium transition metal fluorides, BaMF4 (M = Mn, Co, Ni) to be a series of new electrode materials applied in standard three-electrode configuration. Benefiting from the efficient immersing of electrolyte ions, these materials own prominent specific capacitance. Electrochemical characterizations demonstrate that all the BaMF4 electrodes show both capacitive behavior and Faradaic redox reactions in the cyclic voltammograms, and ability of charge storage by charging-discharging cycling with high cycling stability. Particularly, BaCoF4 shows the the highest specific capacitance of 360 F g-1 at current density of 0.6 A g-1, even the particle size is far beyond nanometer scale. In addition, first principles calculations reveal the possible underlying mechanisms.
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    The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.
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    Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization.
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    Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [11-20] and [0001] directions leading to the formation of such a network structure, where the vertically [0001] oriented tapered walls are laterally align along one of the three [11-20] directions. Inclined facets of these walls are identified as r-planes [(1-102)-planes] of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the r-plane side facets of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.
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    Solving the atomic structure of metallic clusters is fundamental to understanding their optical, electronic, and chemical properties. We report the structure of Au$_{\text{146}}$(p-MBA)$_{\text{57}}$ at subatomic resolution (0.85 Å) using electron diffraction (MicroED) and atomic resolution by X-ray diffraction. The 146 gold atoms may be decomposed into two constituent sets consisting of 119 core and 27 peripheral atoms. The core atoms are organized in a twinned FCC structure whereas the surface gold atoms follow a C$_{2}$ rotational symmetry about an axis bisecting the twinning plane. The protective layer of 57 p-MBAs fully encloses the cluster and comprises bridging, monomeric, and dimeric staple motifs. Au$_{\text{146}}$(p-MBA)$_{\text{57}}$ is the largest cluster observed exhibiting a bulk-like FCC structure as well as the smallest gold particle exhibiting a stacking fault.
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    57Fe Mossbauer spectroscopy measurements were performed on a powdered CuFe2Ge2 sample that orders antiferromagnetically at ~ 175 K. Whereas a paramagnetic doublet was observed above the Neel temperature, a superposition of paramagnetic doublet and magnetic sextet (in approximately 0.5 : 0.5 ratio) was observed in the magnetically ordered state, suggesting a magnetic structure similar to a double-Q spin density wave with half of the Fe paramagnetic and another half bearing static moment of ~ 0.5 - 1 mu_B. These results call for a re-evaluation of the recent neutron scattering data and band structure calculations.
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    The stacking problem is approached by computational mechanics, using an Ising next nearest neighbor model. Computational mechanics allows to treat the stacking arrangement as an information processing system in the light of a symbol generating process. A general method for solving the stochastic matrix of the random Gibbs field is presented, and then applied to the problem at hand. The corresponding phase diagram is then discussed in terms of the underlying $\epsilon$-machine, or optimal finite state machine, describing statistically the system. The occurrence of higher order polytypes at the borders of the phase diagram is also analyzed. Discussion of the applicability of the model to real system such as ZnS and Cobalt is done. The method derived is directly generalizable to any one dimensional model with finite range interaction.
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    We study the temperature dependence of the Rashba-split bands in the bismuth tellurohalides BiTe$X$ $(X=$ I, Br, Cl) from first principles. We find that increasing temperature reduces the Rashba splitting, with the largest effect observed in BiTeI with a reduction of the Rashba parameter of $40$% when temperature increases from $0$ K to $300$ K. These results highlight the inadequacy of previous interpretations of the observed Rashba splitting in terms of static-lattice calculations alone. Notably, we find the opposite trend, a strengthening of the Rashba splitting with rising temperature, in the pressure-stabilized topological-insulator phase of BiTeI. We propose that the opposite trends with temperature on either side of the topological phase transition could be an experimental signature for identifying it. The predicted temperature dependence is consistent with optical conductivity measurements, and should also be observable using photoemission spectroscopy, which could provide further insights into the nature of spin splitting and topology in the bismuth tellurohalides.

Recent comments

Zoltán Zimborás Jan 07 2016 06:50 UTC

Interesting, both the 2nd and the 4th author is called Yuanping Chen... :)