Materials Science (cond-mat.mtrl-sci)

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    Electric-field noise from the surfaces of ion-trap electrodes couples to the ion's charge causing heating of the ion's motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exact mechanism that gives rise to electric-field noise from surfaces is not well-understood and remains an active area of research. In this work, we detail experiments intended to measure ion motional heating rates with exchangeable surfaces positioned in close proximity to the ion, as a sensor to electric-field noise. We have prepared samples with various surface conditions, characterized in situ with scanned probe microscopy and electron spectroscopy, ranging in degrees of cleanliness and structural order. The heating-rate data, however, show no significant differences between the disparate surfaces that were probed. These results suggest that the driving mechanism for electric-field noise from surfaces is due to more than just thermal excitations alone.
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    Extreme nanowires (ENs) represent the ultimate class of crystalline materials: They are the smallest possible periodic materials. With atom-wide motifs repeated in 1D, they offer a unique perspective into the Physics and Chemistry of low-dimensional systems. Single-walled carbon nanotubes (SWCNTs) provide ideal environments for the creation of such materials. Here we report the observation of Te ENs grown inside ultra-narrow SWCNTs with diameters between 0.7nm and 1.1nm. Through state-of-the-art imaging techniques and high-precision, high-throughput ab initio calculations, we unambiguously determine the competing structures of encapsulated Te as a function of the encapsulating diameters. From 1-atom-wide Peierls-distorted linear chains -- the ultimate ENs, Te morphs into zigzag chains and then gives rise to helical structures that are the 1D analogues of bulk Te. The pitch of the encapsulated Te coils varies non-monotonically with the diameter of the encapsulating SWCNTs.
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    Many complex oxides (including titanates, nickelates and cuprates) show a regime in which resistivity follows a power law in temperature ($\rho\propto T^2$). By analogy to a similar phenomenon observed in some metals at low temperature, this has often been attributed to electron-electron (Baber) scattering. We show that Baber scattering results in a $T^2$ power law only under several crucial assumptions which may not hold for complex oxides. We illustrate this with sodium metal ($\rho_\text{el-el}\propto T^2$) and strontium titanate ($\rho_\text{el-el}\not\propto T^2$). We conclude that an observation of $\rho\propto T^2$ is not sufficient evidence for electron-electron scattering.
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    Zirconium pentatelluride ZrTe$_5$, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3$\times$10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature $\textit{T}$$_p$. $\textit{T}$$_p$ is found to scale approximately as $\textit{n}$$_H^{0.27}$, where the Hall carrier concentration $\textit{n}$$_H$ is linked with the Fermi level by $\textit{\epsilon}$$_F$ $\propto$ $\textit{n}$$_H^{1/3}$ in a linearly dispersed Dirac band. This relation indicates $\textit{T}$$_p$ monotonically increases with $\textit{\epsilon}$$_F$, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.
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    We present an investigation of the effect of the interaction between a thin polystyrene film and its supporting substrate on its glass transition temperature (Tg). We modulate this interaction by depositing the film on end-tethered polystyrene grafted layers of controlled molecular parameters. By comparing Tg measurements versus film thickness for films deposited on different grafted layers and films deposited directly on a silicon substrate, we can conclude that there is no important effect of the film-subtrate interaction. Our interpretation of these results is that local orientation and dynamic effects substantial enough to influence Tg cannot readily be obtained by grafting prepolymerized chains to a surface, due to intrinsic limitation of the surface grafting density.
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    Shape memory alloys often show a complex hierarchical morphology in the martensitic state. To understand the formation of this twin-within-twins microstructure, we examine epitaxial Ni-Mn-Ga films as a model system. In-situ scanning electron microscopy experiments show beautiful complex twinning patterns with a number of different mesoscopic twin boundaries and macroscopic twin boundaries between already twinned regions. We explain the appearance and geometry of these patterns by constructing an internally twinned martensitic nucleus, which can take the shape of a diamond or a parallelogram, within the basic phenomenological theory of martensite. These nucleus contains already the seeds of different possible mesoscopic twin boundaries. Nucleation and growth of these nuclei determines the creation of the hierarchical space-filling martensitic microstructure. This is in contrast to previous approaches to explain a hierarchical martensitic microstructure. This new picture of creation and anisotropic, well-oriented growth of twinned martensitic nuclei explains the morphology and exact geometrical features of our experimentally observed twins-within-twins microstructure on the meso- and macroscopic scale.
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    We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.
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    This article continues our recent publication [I.A. Baburin and D.M. Proserpio and V.A. Saleev and A.V. Shipilova, Phys. Chem. Chem. Phys.17, 1332 (2015)] where we have presented a comprehensive computational study of sp3 carbon allotropes based on the topologies proposed for zeolites. Here we predict six new silicon and six new germanium allotropes which have the same space group symmetries and topologies as those predicted earlier for the carbon allotropes, and study their structural, elastic, vibrational, electronic and optical properties.
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    Ultrafast plasmonics of novel materials has emerged as a promising field of nanophotonics bringing new concepts for advanced optical applications. Ultrafast electronic photoexcitation of a diamond surface and subsequent surface plasmon-polaritons (SPPs) excitation are studied both theoretically and experimentally - for the first time. After photoexcitation on the rising edge of the pulse, transient surface metallization was found to occur for laser intensity near 18 TW/cm$^2$ due to enhancement of the impact ionization rate; in this regime, the dielectric constant of the photoexcited diamond becomes negative in the trailing edge of the pulse thereby increasing the efficacy with which surface roughness leads to inhomogeneous energy absorption at the SPP wave-vector. These transient SPP waves imprint permanent fine and coarse surface ripples oriented perpendicularly to the laser polarization. The theoretical modeling is supported by the experiments on the generation of laser-induced periodic surface structure on diamond surface with normally incident 515-nm, 200-fs laser pulses. Sub-wavelength ($\Lambda \approx 100$ nm) and near wavelength ($\Lambda \approx 450$ nm) surface ripples oriented perpendicularly to the laser polarization emerged within the ablative craters with the increased number of laser shots; the spatial periods of the surface ripples decrease with the increasing exposure following known cumulative trends. The comparison between experimental data and theoretical predictions makes evident the role of transient changes of the dielectric permittivity of diamond during the initial stage of periodic surface ripple formation upon irradiation with ultrashort laser pulses.
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    It is often claimed that error cancellation plays an essential role in quantum chemistry and first-principle simulation for condensed matter physics and materials science. Indeed, while the energy of a large, or even medium-size, molecular system cannot be estimated numerically within chemical accuracy (typically 1 kcal/mol or 1 mHa), it is considered that the energy difference between two configurations of the same system can be computed in practice within the desired accuracy. The purpose of this paper is to provide a quantitative study of discretization error cancellation. The latter is the error component due to the fact that the model used in the calculation (e.g. Kohn-Sham LDA) must be discretized in a finite basis set to be solved by a computer. We first report comprehensive numerical simulations performed with Abinit on two simple chemical systems, the hydrogen molecule on the one hand, and a system consisting of two oxygen atoms and four hydrogen atoms on the other hand. We observe that errors on energy differences are indeed significantly smaller than errors on energies, but that these two quantities asymptotically converge at the same rate when the energy cut-off goes to infinity. We then analyze a simple one-dimensional periodic Schrödinger equation with Dirac potentials, for which analytic solutions are available. This allows us to explain the discretization error cancellation phenomenon on this test case with quantitative mathematical arguments.
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    Energy level alignment at solid-solvent interfaces is an important step in determining the properties of electrochemical systems. The positions of conduction and valence band edges of a semiconductor are affected by its environment. In this study, using first-principles DFT calculation, we have determined the level shifts of the semiconductors TiO$_2$ and ZnO at the interfaces with MeCN and DMF solvent molecules. The level shifts of semiconductor is obtained using the potential difference between the clean and exposed surfaces of asymmetric slabs. In this work, neglecting the effects of ions in the electrolyte solution, we have shown that the solvent molecules give an up-shift to the levels, and the amount of this shift varies with coverage. It is also shown that the shapes of density of states do not change sensibly near the gap. Molecular dynamics simulations of the interface have shown that at room temperatures the semiconductor surface is not fully covered by the solvent molecules, and one must use intermediate values in an static calculations.
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    Cellular materials not only show interesting static properties but can also be used to manipulate dynamic mechanical waves. In this contribution, the existence of phononic band gaps in periodic cellular structures is experimentally shown via sonic transmission experiment. Cellular structures with varying numbers of cells are excited by piezoceramic actuators and the transmitted waves are measured by piezoceramic sensors. The minimum number of cells necessary to form a clear band gap is determined. A rotation of the cells does not have an influence on the formation of the gap, indicating a complete phononic band gap. The experimental results are in good agreement with the numerically obtained dispersion relation.
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    Prompted by recent reports on $\sqrt{3} \times \sqrt{3}$ graphene superlattices with intrinsic inter-valley interactions, we perform first-principles calculations to investigate the electronic properties of periodically nitrogen-doped graphene and carbon nanotube nanostructures. In these structures, nitrogen atoms substitute one-sixth of the carbon atoms in the pristine hexagonal lattices with exact periodicity to form perfect $\sqrt{3} \times \sqrt{3}$ superlattices of graphene and carbon nanotubes. Multiple nanostructures of $\sqrt{3} \times \sqrt{3}$ graphene ribbons and carbon nanotubes are explored, and all configurations show nonmagnetic and metallic behaviors. The transport properties of $\sqrt{3} \times \sqrt{3}$ graphene and carbon nanotube superlattices are calculated utilizing the non-equilibrium Green's function formalism combined with density functional theory. The transmission spectrum through the pristine and $\sqrt{3} \times \sqrt{3}$ armchair carbon nanotube heterostructure shows quantized behavior under certain circumstances.
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    First-principles calculations combining density-functional theory and continuum solvation models enable realistic theoretical modeling and design of electrochemical systems. When a reaction proceeds in such systems, the number of electrons in the portion of the system treated quantum mechanically changes continuously, with a balancing charge appearing in the continuum electrolyte. A grand-canonical ensemble of electrons at a chemical potential set by the electrode potential is therefore the ideal description of such systems that directly mimics the experimental condition. We present two distinct algorithms, a self-consistent field method (GC-SCF) and a direct variational free energy minimization method using auxiliary Hamiltonians (GC-AuxH), to solve the Kohn-Sham equations of electronic density-functional theory directly in the grand canonical ensemble at fixed potential. Both methods substantially improve performance compared to a sequence of conventional fixed-number calculations targeting the desired potential, with the GC-AuxH method additionally exhibiting reliable and smooth exponential convergence of the grand free energy. Finally, we apply grand-canonical DFT to the under-potential deposition of copper on platinum from chloride-containing electrolytes and show that chloride desorption, not partial copper monolayer formation, is responsible for the second voltammetric peak.
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    In the three-dimensional Dirac semimetal Cd3As2 we notice an interplay of electronic and phonon degrees of freedom mediated by topological effects. There exist a pronounced quasielastic scattering and an anomalous anharmonicity of optical phonons. These effects follow a similar temperature dependence with a characteristic temperature T* ~ 100 K. Furthermore, there exist a resonant enhancement of phonon scattering intensity as function of incident photon energy. This energy of 1.9 eV coincides with interband electronic transitions in Cd3As2. A refined analysis shows that these effects are coupled via interband transitions in the Dirac states in Cd3As2 and a degeneracy of phonon energies with thermally excited electronic states. This degeneracy enhances energy density fluctuations.

Recent comments

Zoltán Zimborás Jan 07 2016 06:50 UTC

Interesting, both the 2nd and the 4th author is called Yuanping Chen... :)