Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

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    Single-shot qubit readout typically combines high readout contrast with long-lived readout signals, leading to large signal-to-noise ratios and high readout fidelities. In recent years, it has been demonstrated that both readout contrast and readout signal lifetime, and thus the signal-to-noise ratio, can be enhanced by forcing the qubit state to transition through intermediate states. In this work, we demonstrate that the sub-Poissonian relaxation statistics introduced by intermediate states can reduce the single-shot readout error rate by orders of magnitude even when there is no increase in signal-to-noise ratio. These results hold for moderate values of the signal-to-noise ratio ($\textrm{SNR} \lesssim 100$) and a small number of intermediate states ($N \lesssim 10$). The ideas presented here could have important implications for readout schemes relying on the detection of transient charge states, such as spin-to-charge conversion schemes for semiconductor spin qubits and parity-to-charge conversion schemes for topologically protected Majorana qubits.
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    An interacting bilayer electron system provides an extended platform to study electron-electron interaction beyond single layers. We report here experiments demonstrating that the layer densities of an asymmetric bilayer electron system oscillate as a function of perpendicular magnetic field that quantizes the energy levels. At intermediate fields, this interlayer charge transfer can be well explained by the alignment of the Landau levels in the two layers. At the highest fields where both layers reach the extreme quantum limit, however, there is an anomalous, enhanced charge transfer to the majority layer. Surprisingly, when the minority layer becomes extremely dilute, this charge transfer slows down as the electrons in the minority layer condense into a Wigner crystal. Furthermore, by examining the quantum capacitance of the dilute layer at high fields, the screening induced by the composite fermions in an adjacent layer is unveiled. The results highlight the influence of strong interaction in interlayer charge transfer in the regime of very high fields and low Landau level filling factors.
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    By making use of circularly polarized light and electrostatic gating, monolayer molybdenum disulfide (ML-MoS$_2$) can form a platform supporting multiple types of charge carriers. They can be discriminated by their spin, valley index or whether they're electrons or holes. We investigate the collective properties of those charge carriers and are able to identify new distinct plasmon modes. We analyze the corresponding dispersion relation, lifetime and oscillator strength, and calculate the phase relation between the oscillations in the different components of the plasmon modes. All platforms in ML-MoS$_2$ support a long-wavelength $\sqrt{q}$ plasmon branch at zero Kelvin. In addition to this, for an $n$-component system, $n-1$ distinct plasmon modes appear as acoustic modes with linear dispersion in the long-wavelength limit. These modes correspond to out-of-phase oscillations in the different Fermion liquids and have, although being damped, a relatively long lifetime. Additionally, we also find new distinct modes at large wave vector that are stronger damped by intra-band processes.
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    Heat sources whose characteristic dimension $R$ is comparable to phonon mean free paths display thermal resistances that exceed conventional diffusive predictions. This has direct implications to (opto)electronics thermal management and phonon spectroscopy. Theoretical analyses have so far limited themselves to particular experimental configurations. Here, we build upon the multidimensional Boltzmann transport equation (BTE) to derive universal expressions for the apparent conductivity suppression $S(R) = \kappa_{\text{eff}}(R)/\kappa_{\text{bulk}}$ experienced by radially symmetric 2D and 3D sources. In striking analogy to cross-plane heat conduction in thin films, a distinct quasiballistic regime emerges between ballistic ($\kappa_{\text{eff}} \sim R$) and diffusive ($\kappa_{\text{eff}} \simeq \kappa_{\text{bulk}}$) asymptotes that displays a logarithmic dependence $\kappa_{\text{eff}} \sim \ln(R)$ in single crystals and fractional power dependence $\kappa_{\text{eff}} \sim R^{2-\alpha}$ in alloys (with $\alpha$ the Lévy superdiffusion exponent). Analytical solutions and Monte Carlo simulations for spherical and circular heat sources in Si, GaAs, Si$_{0.99}$Ge$_{0.01}$ and Si$_{0.82}$Ge$_{0.18}$, all carried out from first principles, confirm the predicted generic tendencies. Contrary to the thin film case, common approximations like kinetic theory estimates $\kappa_{\text{eff}} \simeq \sum S_{\omega}^{\text{grey}} \, \kappa_{\omega}$ and modified Fourier temperature curves perform relatively poorly. Up to threefold deviations from the BTE solutions for sub-100$\,$nm sources underline the need for rigorous treatment of multidimensional nondiffusive transport.
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    It has been theoretically predicted that light carrying orbital angular momentum, or twisted light, can be tuned to have a strong magnetic-field component at optical frequencies. We here consider the interaction of these peculiar fields with a semiconductor quantum dot and show that the magnetic interaction results in new types of optical transitions. In particular, a single pulse of such twisted light can drive light-hole-to-conduction band transitions that are cumbersome to produce using conventional Gaussian beams or even twisted light with dominant electric fields.
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    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.
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    Two-dimensional (2D) semiconductors isoelectronic to phosphorene has been drawing much attention recently due to their promising applications for next-generation (opt)electronics. This family of 2D materials contains more than 400 members, including (a) elemental group-V materials, (b) binary III-VII and IV-VI compounds, (c) ternary III-VI-VII and IV-V-VII compounds, making materials design with targeted functionality unprecedentedly rich and extremely challenging. To shed light on rational functionality design with this family of materials, we systemically explore their fundamental band gaps and alignments using hybrid density functional theory (DFT) in combination with machine learning. First, GGA-PBE and HSE calculations are performed as a reference. We find this family of materials share similar crystalline structures, but possess largely distributed band-gap values ranging approximately from 0 to 8 eV. Then, we apply machine learning methods, including Linear Regression (LR), Random Forest Regression (RFR), and Support Vector Machine Regression (SVR), to build models for prediction of electronic properties. Among these models, SVR is found to have the best performance, yielding the root mean square error (RMSE) less than 0.15 eV for predicted band gaps, VBMs, and CBMs when both PBE results and elemental information are used as features. Thus, we demonstrate machine learning models are universally suitable for screening 2D isoelectronic systems with targeted functionality and especially valuable for the design of alloys and heterogeneous systems.
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    We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high to low resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of non-linear equations describing the memristors dynamics is solved exactly, without any approximations. The time dependencies of memristances are found and it is shown that the voltage falls across memristors are proportional to their threshold voltages. A compact expression for the network switching time is derived.
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    We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charge layers exhibit distinct spectral signatures at terahertz frequencies, a combination of terahertz and far-infrared spectroscopy enables us to extract (a) individual contributions to the total conductivity, as well as (b) effective scattering rates for charge-carriers in each layer. Furthermore, by comparing direct-current and terahertz extracted conductivity levels, we are able to determine the extent to which structural defects affect charge transport. Our results evidence that (i) a non-unity Hall-factor and (ii) the considerable contribution of holes to the overall conductivity, lead to a lower apparent mobility in Hall-effect measurements. Overall, our work demonstrates that terahertz spectroscopy is a suitable technique for the study of bilayer charge systems with large differences in transport properties between layers, such as quantum wells in III-Nitride semiconductors.
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    This paper presents a new class of magneto acoustic spin Hall (MASH) oscillators that combine the tunability of standard spin torque nano oscillators (STNO) with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In MASH oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) are shaped by the transmission response of the HBAR that acts as a multiple peakbandpass filter and a delay element due to its large time constant, providing delayed feedback. The filtered voltage oscillations can be fed back to the MTJ via a) strain, b) current, or c) magnetic field. We develop a SPICE-based circuit model by combining experimentally benchmarked models including the stochastic Landau-Lifshitz-Gilbert (sLLG) equation for magnetization dynamics and the Butterworth Van Dyke (BVD) circuit for the HBAR. Using the self-consistent model, we project up to ~50X enhancement in the oscillator linewidth with Q reaching up to 36500 at 3 GHz, while preserving the tunability by locking the STNO to the nearest high Q peak of the HBAR. We expect that our results will inspire NEMS-based solutions to spintronic devices by combining attractive features of both fields for a variety of applications.
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    In this work, we study how the combination of rotation and a topological defect can influence the energy spectrum of a two dimensional electron gas in a strong perpendicular magnetic field. A deviation from the linear behavior of the energy as a function of magnetic field, caused by a tripartite term of the Hamiltonian, involving magnetic field, the topological charge of the defect and the rotation frequency, leads to novel features which include a range of magnetic field without corresponding Landau levels and changes in the Hall quantization steps.
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    The architecture of mechanical metamaterialsis designed to harness geometry, non-linearity and topology to obtain advanced functionalities such as shape morphing, programmability and one-way propagation. While a purely geometric framework successfully captures the physics of small systems under idealized conditions, large systems or heterogeneous driving conditions remain essentially unexplored. Here we uncover strong anomalies in the mechanics of a broad class of metamaterials, such as auxetics, shape-changers or topological insulators: a non-monotonic variation of their stiffness with system size, and the ability of textured boundaries to completely alter their properties. These striking features stem from the competition between rotation-based deformations---relevant for small systems---and ordinary elasticity, and are controlled by a characteristic length scale which is entirely tunable by the architectural details. Our study provides new vistas for designing, controlling and programming the mechanics of metamaterials in the thermodynamic limit.
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    We study theoretically the single-electron triangular zigzag graphene quantum dot in uniform in-plane electric fields. The far-infrared absorption spectra of the dot are calculated by the tight-binding method. The energy spectra and the distribution of wave functions are also presented to analyse the far-infrared spectra. The orthogonal zero-energy eigenstates are arranged along to the direction of the external field. The remarkable result is that all intraband transitions and some interband transitions are forbidden when the absorbed light is polarized along the direction of the electric field. With x-direction electric field, all intraband absorption is y polarized due to the electric-field-direction-polarization selection rule. Moreover, with y-direction electric field, all absorption is either x or y polarized due to the parity selection rule as well as to the electric-field-direction-polarization selection rule. Our calculation shows that the formation of the FIR spectra is co-decided by the polarization selection rules and the overlap between the eigenstates of the transition.
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    Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. Here we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In TIs, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional HLN formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In WSM thin films having intermediate to large values of the quasiparticle mass extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. We discuss implications for experiments and provide a brief comparison with transition metal dichalcogenides.

Recent comments

Noon van der Silk Sep 04 2013 23:55 UTC

Part of the standard equipment for playing bosonic baseball? It's a good game, but it's hard to know who's playing.